TIP122
by American Microsemiconductor
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Review & Description
TIP122 h(FE) Min. Current gain.:1.0k
Mounting Style:T
Package Style:TO-220AB
Military/High-Rel:N
t(off) Max. (s) Off time:8.5uÂ
@I(C) (A) (Test Condition):5.0
V(BR)CEO (V):100
V(CE)sat Max. (V):4.0
@I(C) (A) (Test Condition):3.0
@I(C) (A) (Test Condition):Ô
@V(CE) (V) (Test Condition):3.0
Absolute Max. Power Diss. (W):65#
Semiconductor Material:Silicon
@V(CBO) (V) (Test Condition):100
I(C) Max. (A):5.0
t(on) Max. (s) On time.:1.5uÂ
V(BR)CBO (V):100
@I(B) (A) (Test Condition):20m
Maximum Operating Temp (øC):150õ
I(CBO) Max. (A):100u
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Product Details
- Amazon Sales Rank: #1271 in BISS
- Brand: American Microsemiconductor
- Number of items: 1
Features
- TIP122 NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W.
