2N5770
by American Microsemiconductor
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Review & Description
2N5770 Military/High-Rel:NV(BR)CEO (V):15V(BR)CBO (V):30I(C) Max. (A):50mAbsolute Max. Power Diss. (W):700mMaximum Operating Temp (øC):150þI(CBO) Max. (A):10n@V(CBO) (V) (Test Condition):15h(FE) Max. Current gain.:200@I(C) (A) (Test Condition):8.0m@V(CE) (V) (Test Condition):10f(T) Min. (Hz) Transition Freq:900M@I(C) (A) (Test Condition):8.0m@V(CE) (V) (Test Condition):10Semiconductor Material:SiliconPackage Style:TO-92Mounting Style:TV(CE)Ü Nota Bene: Image is not true representation of part Nota Bene: Image is not true representation of part
Product Details
- Amazon Sales Rank: #790 in BISS
- Brand: American Microsemiconductor
- Number of items: 1
Features
- 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR
